EU02Z Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

Diode Semiconductor Korea EU02Z(Z)---EU02A(Z)
HIGH EFFICIENCY RECTIFIERS
VOLTAGE RANGE: 200--- 600 V
CURRENT: 1.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with freon, Alcohol, lsopropand and
s im ilar solvents
MECHANICAL DATA
Cas e: JEDEC DO-41, m olded plas tic
Term inals: Axial leads ,s olderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces , 0.34 gram s
Mounting: Any
DO - 41
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Maximum peak repetitive reverse voltage
V_RRM
Maximum RMS voltage
V_RMS
Maximum DC blocking voltage
V_DC
Maximum average f orw ard rectif ied current
9.5mm lead length
Peak forw ard surge current
@T_A=75
I_F(AV)
10ms single half-sine-w ave
superimplsed on rated load
@T_J=125
Maximum instantaneous f orw ard voltage
@ 1.0A
I_FSM
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time
(Note1)
t_rr
Typical junction capacitance
(Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_{θ J L}
T_J
Storage temperature range
T_STG
NOTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Therm al resistance junction to ambient.
EU02Z
200
140
200
EU02
400
280
400
1.0
15.0
1.4
10.0
300.0
100
20
20
- 55 ----- + 150
- 55 ----- + 150
EU02A
600
420
600
UNITS
V
V
V
A
A
V
A
ns
15
pF
̼ͤ
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