ES3A Datasheet, PDF (1/2 Pages) Diodes Incorporated – 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Diode Semiconductor Korea
ES3A--- ES3G
SURFACE MOUNT RECTIFIERS
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 3.0 A
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-214AB,molded plastic
Terminals: Solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.21 grams
Mounting position: Any
DO-214AB(SMC)
6.9± 0.25
7.8± 0. 2
1. 3± 0. 25
0.25± 0.06
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ES3A ES3B ^{ES3C ES3D ES3G} UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
50
100
150
200
400
V
V_RMS
35
70
105
140
280
V
V_DC
50
100
150
200
400
V
Maximum average forward rectified current
@T_A=100
I_F(AV)
3.0
A
Peak forward surge current
8.3ms single half-sine-wave
I_FSM
100
A
superimposed on rated load @T_J=125
Maximum instantaneous forward voltage at3.0 A
V_F
0.95
1.25
V
Maximum reverse current
@T_A=25
10
at rated DC blocking voltage @T_A=100
I_R
500
A
Typical reverse recovery time (Note1)
t_rr
35
ns
Typical junction capacitance (Note2)
C_J
45
pF
Typical thermal resistance
(Note3)
R_θJA
25
/W
Operating junction temperature range
T_J
- 55 ---- + 150
Storage temperature range
T_{ST G}
- 55 ---- + 150
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
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2. Measured at 1.0MHZ and applied revers e voltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas