ERD29-02 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIERS

Diode Semiconductor Korea ^{ERD29-02---ERD29-06}
FAST RECOVERY RECT IFIERS
VO LT AGE RANG E: 200 --- 600 V
CURRENT : 2.5 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V -0
MECHANICAL DATA
Cas e:JEDEC DO-27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD -202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces ,1.15 gram s
Mounting pos ition: Any
DO - 27
Dimensions in millimeters
M AXIM UM RAT INGS AND ELECT RICAL CHARACT ERIST ICS
Ratings at 25 am bient tem perature unles s otherw is e s pecified.
Single phas e,half w ave,60 H z,res is tive or inductive load. For capacitive load,derate by 20% .
E RD29-02
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@ T_A =75
Peak f orw ard surge current
V_RRM
V _RMS
V_DC
I_{F (AV)}
8.3ms single half -sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous f orw ard voltage
@ 2.5 A
I_{F SM}
V_F
Maximum reverse current
@ T_A =25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_θJA
T_J
Storage temperature range
T_STG
N OTE:1. Meas ured with I_F=0.5A, I _R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V D C .
3. Therm al res is tanc e f rom junc tion to am bient.
200
140
200
E RD29-04
400
280
400
2 .5
1 5 0 .0
1 .1
5 .0
1 0 0 .0
100
22
35
-55----+150
-55----+150
E RD29-06
600
420
600
UNITS
V
V
V
A
A
V
A
ns
pF
/W
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