EM1YZ Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – PLASTIC SILICON RECTIFIER

Diode Semiconductor Korea EM1Y(Z)---EM1C(Z)
PLASTIC SILICON RECTIFIER
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 1.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
DO - 41
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
EM1Y EM1Z EM1 EM1A EM1B EM1C _UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
V_RRM 100
V_RMS
70
V_DC
100
I_F(AV)
8.3ms single half-sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.0 A
I_FSM
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note1)
C_J
Typical thermal resistance
(Note2)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
200
400
600
140
280
420
200
400
600
1.0
45.0
0.97
5.0
50.0
15
50
- 55---- +150
- 55---- + 150
800 1000
V
560 700
V
800 1000
V
A
A
V
A
pF
̼ͤ
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