DB151S Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER

Diode Semiconductor Korea
DB151S - - - DB157S
SILICON BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
Surge overload rating to 30 Amperes peak
Glass passivated chip junctions
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
Plastic material has UL flammability classification
94V-O
Polarity symbols molded on body
Weight: 0.016 ounces,0.45 grams
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
DB-S
1± 0.1
8.3± 0.1
5± 0.2
7.9± 0.2
6.4± 0.1
1.2± 0.3
10± 0.6
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resis tive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current @T_A=25
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.5 A
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Operating junction temperature range
Storage temperature range
DB
151S
DB
152S
DB
153S
DB
154S
DB
155S
DB
156S
DB
157S
UNITS
V_RRM 50
100 200 400 600 800 1000
V
V_RMS 35
70
140 280 420 560 700
V
V_DC 50
100 200 400 600 800 1000
V
I_F(AV)
1.5
A
I_FSM
40
A
V_F
I_R
T_J
T_STG
1.1
10.0
1.0
- 55 ---- + 150
- 55 ---- + 150
V
μA
mA
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