BYW32 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Fast Silicon Mesa Rectifiers

Diode Semiconductor Korea
BYW32(Z) - - - BYW36(Z)
FAST RECOVERY RECTIFIERS
VOLTAGE RANGE: 200---600 V
CURRENT: 2.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-15B,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.024ounces,0.68 grams
Mounting position: Any
DO - 15B
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
BYW
32
Maximum recurrent peak reverse voltage
V_RRM
200
Maximum RMS voltage
V_RMS
140
Maximum DC blocking voltage
V_DC
200
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 2.0 A
I_FSM
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=150
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
BYW
33
300
210
300
BYW
34
400
280
400
2.0
BYW
35
500
350
500
40.0
1.2
5.0
50.0
200
22
35
- 55---- +150
- 55---- +150
BYW
36
600
420
600
UNITS
V
V
V
A
A
V
A
ns
pF
̼ͤ
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