BYW178 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Very Fast Silicon Mesa Rectifier

Diode Semiconductor Korea
BYW178
FAST RECOVERY RECT IFIER
VOLTAGE RANGE: 800 V
CURRENT: 3.0 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon Alcohol,Is opropanol and
s im ilar s olvents
MECHANICAL DATA
Cas e: JEDEC DO--27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces , 1.15 gram s
Mounting pos ition: Any
DO - 27
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
V _{R MS}
V_DC
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T_A=75
Peak f orw ard surge current
I_{F (AV)}
10ms single half-sine-w ave
I_{F SM}
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 3.0 A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
Typical junction capacitance (Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
I_R
t_rr
C_J
R_{θ J A}
T_J
Storage temperature range
T_STG
N OTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V D C .
3. Therm al resistance f rom junction to am bient.
BYW 178
800
560
800
3.0
80
1.9
1.0
20
60
32
70
-55-----+150
-55-----+150
UNITS
V
V
V
A
A
V
A
ns
pF
/W
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