BYV34 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Dual rectifier diodes ultrafast

Diode Semiconductor Korea
BYV34---SERIES
SUPER FAST RECTIFIERS
VOLTAGE RANGE: 300 - 500 V
CURRENT: 20 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with freon,alcohol, ls opropand
and similar solvents
MECHANICAL DATA
Case: JEDEC TO-220AB, molded plastic
Terminals: Plated leads,solderable per
MIL-STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.071 ounces,2.006 grams
Mounting: Any
TO - 220AB
10.2± 0.2
3.8± 0.15
4.5± 0.2
1.4± 0.2
PIN
1 23
2.6± 0.2
0.9± 0.1
2.5± 0.1
PIN 1
PIN 3
0.5± 0.1
CASE
PIN 2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
@T_A=115
Peak forward surge current
10ms single half-sine-wave
superimposed on rated load
Maximum instantaneous
forward voltage
@I_F=10A,T_J=150
@I_F=20A,T_J=25
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time
(Note1)
Typical thermal resistance
(Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1.Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Thermal resistance from junction to ambient.
BYV34-300 BYV34-400 BYV34-500 ^UNITS
V_RRM
300
400
500
V
V_RMS
210
280
350
V
V_DC
300
400
500
V
I_F(AV)
20
A
I_FSM
V_F
I_R
t _rr
R_θJA
T_J
T_STG
120
1.05
1.35
50
600
60
60
- 55 ----- + 150
- 55 ----- + 150
A
V
A
ns
K/W
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