BYV26A Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SUPER FAST RECTIFIERS

Diode Semiconductor Korea _{BYV26A(Z)---BYV26E(Z)}
SUPER FAST RECTIFIERS
VOLTAGE RANGE: 200 --- 1000 V
CURRENT: 1.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
DO - 41
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
BYV26A BYV26B BYV26C BYV26D BYV26E UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5 mm lead length, @T_A=75
Peak forw ard surge current
V_RRM
200
V_RMS
140
V_DC
200
I_F(AV)
10ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.0A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_θJA
T_J
Storage temperature range
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
T_STG
400
600
800
1000
V
280
420
560
700
V
400
600
800
1000
V
1.0
A
30.0
2.5
5.0
150.0
30
45
100
- 55 ----- + 150
- 55 ----- + 150
A
V
A
75
ns
40
pF
/W
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