BYV12 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Fast Silicon Mesa Rectifiers

Diode Semiconductor Korea _{BYV12(Z)---BYV16(Z)}
FAST RECOVERY RECTIFIERS
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 1.5 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
DO - 15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYV
12
Maximum recurrent peak reverse voltage
V_RRM
100
Maximum RMS voltage
V_RMS
70
Maximum DC blocking voltage
V_DC
100
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.5 A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance (Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
BYV
13
400
280
400
BYV
14
600
420
600
1.5
BYV
15
800
560
800
60.0
1.3
5.0
100.0
300
18
45
- 55---- +150
- 55---- +150
BYV
16
1000
700
1000
UNITS
V
V
V
A
A
V
A
ns
pF
̼ͤ
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