BYT56A Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY ECTIFIERS

Diode Semiconductor Korea BYT56A(Z)--- BYT56M(Z)
HIGH EFFICIENCY ECTIFIERS
FEATURES
Fast recovery times
Ul 90V0 flame retardant epoxy molding compound
Diffused junction
Low cost
High surge current capability
Bevel round chip, aualanche operation
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 3.0 A
DO - 27
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
BYT
56A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
V_RRM 50
V_RMS 35
V_DC
50
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 3.0A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance (Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
BYT
56B
100
70
100
BYT
56D
200
140
200
BYT
56G
400
280
400
3.0
BYT
56J
600
420
600
150.0
1.4
10.0
150.0
100
75
30
- 55 ---- + 150
- 55 ---- + 150
BYT
56K
800
560
800
BYT
56M
1000
700
1000
UNITS
V
V
V
A
A
V
A
ns
50
pF
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