BYT52AZ Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – FAST RECOVERY RECTIFIERS

Diode Semiconductor Korea ^{BYT52A(Z)---BYT52M(Z)}
FAST RECOVERY RECT IFIERS
VOLT AGE RANGE: 50 --- 1000 V
CURRENT: 1.4 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon, Alcohol,Is opropanol and
s im ilar s olvents
DO - 15
MECHANICAL DATA
Cas e:JEDEC DO--15,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces ,0.39 gram s
Mounting pos ition: Any
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@ T_A =7 5
Peak f orw ard surge current
V_RRM
V _{R MS}
V_DC
I_{F (A V)}
10ms single half -sine-w ave
I_{F S M}
superimposed on rated load @T_J=125
Maximum instantaneous f orw ard voltage
(
@ 1.0A
V_F
Maximum reverse current
@ T_A =2 5
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_qJA
Operating junction temperature range
T_J
Storage temperature range
N OTE:1. Meas ured with I_F=0.5A, I_R=1A, I_rr=0.25A.
T_STG
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C .
3. Therm al resistance f rom junction to am bient.
BYT
52A
50
35
50
BYT
52B
100
70
10
BYT
52D
200
140
200
BYT
52G
400
280
400
1.4
BYT
52J
600
420
600
5 0 .0
1.3
5.0
1 0 0 .0
200
18
45
-55 ---- + 150
-55 ---- + 150
BYT
52K
800
560
800
BYT _UNITS
52M
1000
V
700
V
1000
V
A
A
V
A
ns
pF
/W
www.diode.kr