BYM36AZ Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – FAST RECOVERY RECTIFIERS

Diode Semiconductor Korea BYM36A(Z)---BYM36G(Z)
FAST RECOVERY RECTIFIERS
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon, Alcohol,Is opropanol
nn and s im ilar s olvents
MECHANICAL DATA
Cas e:JEDEC DO--27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces ,1.15 gram s
Mounting pos ition: Any
VOLTAGE RANGE: 200 --- 1400 V
CURRENT: 3.0 A
DO - 27
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
V _{R MS}
V_DC
Maximum average forw ard rectif ied current
9.5mm lead length,
@T_A=75
I_{F (A V)}
Peak forwardsurge current
10ms single half -sine-w ave
I_{F S M}
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
Typical junction capacitance (Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
V_F
I_R
t_rr
C_J
R_θJA
T_J
T_STG
3. Thermal resistance f rom junction to am bient.
BYM
36A
200
140
200
BYM
36B
400
280
200
100
BYM
36C
600
420
600
BYM
36D
800
560
800
BYM
36E
1000
700
1000
3.0
200.0
1.57
5.0
100.0
150
32
22
-55 ---- + 150
-55 ---- + 150
BYM
36F
1200
840
1200
BYM _UNITS
36G
1400 V
980
V
1400 V
A
A
V
A
250
ns
pF
/W
www.diode.kr