BY228Z Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – FAST RECOVERY RECTIFIER

Diode Semiconductor Korea
BY228(Z)
FAST RECOVERY RECT IFIER
VOLTAGE RANGE: 1500 V
CURRENT: 5.0 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO-27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:0.041 ounces ,1.15 gram s
Mounting pos ition: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
V_RRM
V _{R MS}
V_DC
I_{F (AV)}
8.3ms single half -sine-w ave
I_{F SM}
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 5.0 A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC .
3. Thermal resistance f rom junction to ambient.
BY228
1500
1050
1500
5.0
50.0
1.5
5.0
150.0
1000
40
22
- 55---- +150
-55---- +150
UNITS
V
V
V
A
A
V
A
ns
pF
/W
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