BR35005W Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BRIDGE RECTIFIERS

Diode Semiconductor Korea ^{BR35005(W)---BR3510(W)}
SILICON BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
Surge overload rating to 400 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Mounting: thru hole for # 8 screw mounting
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 35.0 A
BR - W
METAL HEAT SINK
PLASTIC
1.1± 0.1
28.6± 0.3
5.36 TYP.
17.6± 0.3
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,res istive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
output current @T_A=50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 17.5 A
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Operating junction temperature range
Storage temperature range
BR
35005
(W)
V_RRM 50
V_RMS 35
V_DC 50
BR
3501
(W)
100
70
100
BR
3502
(W)
200
140
200
BR
3504
(W)
400
280
400
BR
3506
(W)
600
420
600
BR
3508
(W)
800
560
800
BR
3510
(W)
1000
700
1000
UNITS
V
V
V
I_F(AV)
35.0
A
I_FSM
400.0
A
V_F
1.1
V
10.0
μA
I_R
1.0
mA
T_J
T_STG
- 55 ---- + 125
- 55 ---- + 150
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