BR25005 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BRIDGE RECTIFIERS

Diode Semiconductor Korea
BR25005 - - - BR2510
SILICON BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
Surge overload rating to 300 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Mounting: thru hole for # 8 screw mounting
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 25.0 A
BR
METAL HEAT SINK
PLASTIC
28.6± 0.45
16± 0.5
5.3 TYP.
13.7± 0.5
6.4 0.8
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,res istive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
output current @T_A=50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 12.5A
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Operating junction temperature range
Storage temperature range
BR BR
25005 2501
V_RRM 50
100
V_RMS 35
70
V_DC 50
100
I_F(AV)
BR
2502
200
140
200
BR
2504
400
280
400
25.0
BR BR
2506 2508
600 800
420 560
600 800
BR
2510
UNITS
1000
V
700
V
1000
V
A
I_FSM
300.0
A
V_F
I_R
T_J
T_STG
1.1
5.0
0.5
- 55 ---- + 150
- 55 ---- + 150
V
μA
mA
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