BAW56W Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed double diode

Diode Semiconductor Korea
Surface mount switching diode
BAW56W
FEATURES
z For high-speed switching
Applications.
z Common anode
Pb
Lead-free
APPLICATIONS
z High speed switching application.
SOT-323
ORDERING INFORMATION
Type No.
Marking
BAW56W
KJC
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Limits
Unit
Peak Repetitive Reverse Voltage
Working peak reverse voltage
DC Reverse Voltage
Forward Continuous Current
Surge forward Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
V_RRM
V_RWM
V_R
I_F
I_FS
P_d
T_j
T_STG
70
V
200
mA
4.5
A
250
mW
150
℃
-55 to +150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Symbol
V_(BR)R
Forward Voltage
V_F
Reverse Leakage Current
I_R
Diode Capacitance
C_D
Reverse Recovery Time
t_rr
Min MAX
70
-
715
855
-
1000
1250
-
2.5
-
2
-
6
UNIT
V
V
μA
pF
ns
Test Condition
I_R= 100μA
I_F=1mA
I_F=10mA
I_F=50mA
I_F=150mA
V_R=70V
V_R=0V,f=1MHz
I_F=I_R=10mA f=1MHz
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