BAS86 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier diode

Diode Semiconductor Korea
BAS86
SMALL SIGNAL SCHOTTKY DIODE
FEATURES
For general purpose applications
This diode features very low turn-on voltage
and fast switching. These devices are protected
by a PN junction guard ring against exces sive
voltage, such as electrostatic discharges
VOLTAGE RANGE: 50 V
CURRENT: 0.2 A
Mini-melf
Cathode indification
MECHANICAL DATA
Case:JEDEC mini-melf,glass case
Polarity: Color band denotes cathode end
Weight: Approx.0.031 grams
3.4 +0.3
-0.1
0.4 0.1
Dimensions in millimeters
ABSOLUTE RATINGS
Symbols
Continuous reverse voltage
V_R
Forward continuous current
@ T_A=25
I_F
Peak forward current
@ T_A=25
I_FM
Surge forw ard current
@ t_p<1s,T_A=25
I_FSM
Power dissipation
@ T_A=65
P_tot
Junction temperature
T_J
Ambient operating temperature range
T_A
Storage temperature range
T_STG
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Symbols
Min.
Reverse breakdow n voltage
V_R
50.0
Forw ard voltage
Pulse test tp<300 s, <2%
@ IF=0.1mA
@ I_F=1mA
V_F
@ IF=10mA
@ IF=30mA
@ IF=100mA
Leakage current VR=40V
I_R
Diode capacitance at VR=1V,f=1MHz
C_d
Reverse recovery time @ I_F=10mA,I_R=10mA,I_R=1mA
t_rr
Thermal resistance junction to ambient
R_θJA
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
Value
50
200 ¹⁾
500 ¹⁾
5 ¹⁾
200 ¹⁾
125
c-55 ---+ 125
c-55 ---+ 150
UNITS
V
mA
mA
A
mW
Typ.
Max.
UNITS
V
0.30
V
0.38
V
0.45
V
0.60
V
0.90
V
5.0
A
8
pF
5
ns
430¹⁾
/W
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