B5817W Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

Diode Semiconductor Korea
Schottky Barrier Diode
B5817W-B5819W
FEATURES
z Extremely low V_F.
z Low stored change,majority carrier
conduction.
z Low power loss/high efficient
Pb
Lead-free
APPLICATIONS
z For Use In Low Voltage, High Frequency Inverters.
z Free Wheeling, And Polarity Protection Applications.
ORDERING INFORMATION
Type No.
Marking
B5817W
SJ
B5818W
SK
B5819W
SL
SOD-123
Package Code
SOD-123
SOD-123
SOD-123
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
symbol B5817W
Non-Repetitive Peak reverse voltage
V_RSM
24
B5818W
36
B5819W Unit
48
V
Peak repetitive Peak reverse voltage
V_RRM
Working Peak Reverse voltage
V_RWM
20
30
40
V
DC Reverse Voltage
V_R
RMS Reverse Voltage
Average Rectified output Current
Peak forward surge current@=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Storage temperature
V_R(RMS)
I_o
I_FSM
P_d
R_θJA
T_J,T_STG
14
21
1
25
250
80
-65~+125
28
V
A
A
mW
℃/W
℃
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