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B520C Datasheet, PDF (1/2 Pages) Diodes Incorporated – 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Diode Semiconductor Korea
B520C-B560C
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS
REVERSE VOLTAGE: 20 --- 60 V
CURRENT: 5.0 A
FEATURES
Plastic package has Underwriters Laborator
111 Flammability Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief
Metal silicon junction, majority carrier conduction
High surge capability
High current capability,low forward voltage drop
Low power loss,high effciency
For use in low voltage high frequency inverters,free
111 wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250oC/10 1
11 seconds at terminals
MECHANICAL DATA
Case:JEDEC DO-214AB,molded plastic over
1111passivated chip
Terminals:Solder Plated, solderable per MIL-STD-750,
1111Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
DO - 214AB(SMC)
6.9± 0.25
7.8± 0. 2
1. 3± 0. 25
0.25± 0.06
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
B520C B530C B540C
B550C
B560C UNITS
Maximum recurrent peak reverse voltage
VRRM
20
Maximum RMS voltage
VRWS
14
Maximum DC blocking voltage
VDC
20
Maximum average forw ord rectified current at
c TL(SEE FIG.1) (NOTE 2)
I(AV)
Peak forw ard surge current 8.3ms single half-
c sine-w ave superimposed on rated load(JEDEC IFSM
c Method)
Maximum instantaneous forw ard voltage at
v 5.0A(NOTE.1)
VF
Maximum DC reverse current @TA=25oC
IR
at rated DC blockjing voltage(NOTE1) @TA=100oC
Typical thermal resitance (NOTE2)
R JA
R JL
Operating junction and storage temperature range TSTG
Storage temperature range
TJ
NOTE: 1.Pulse test:300 S pulse width,1%duty cy cle
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm2)copper pad areas
30
40
50
21
28
35
30
40
50
5.0
60
V
42
V
60
V
A
175.0
A
0.50
0.5
-65--- +150
20
50.0
10.0
-65--- +150
0.70
V
mA
oC/W
oC
-65--- +150
oC
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