B360L Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – SCHOTTKY BARRIER RECTIFIER

Diode Semiconductor Korea
B360L
SCHOTTKY BARRIER RECTIFIER
REVERSE VOLTAGE: 60 V
CURRENT: 3.0 A
FEATURES
Plastic package has Underwriters Laboratory
111 Flammability Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief
Metal silicon junction, majority carrier conduction
High surge capability
Low power loss,high efficiency
For use in low voltage high frequency inverters ,free
111 wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250^oC/10
111 seconds at terminals
MECHANICAL DATA
Case: NSMC,molded plastic over
1111passivated chip
Terminals:Solder plated, solderable per MIL-STD-750,
1111Method 2026
Polarity: Color band denotes cathode end
Weight:
NSMC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified
7.0± 0.3
8.1± 0.3
1.5± 0.3
0.25± 0.06
Dimensions in millimeters
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ord rectified current at
x T_L(SEE FIG.1)
Peak forw ard surge current 8.3ms single half-
x sine-w ave superimposed on rated load(JEDEC
x Method)
Maximum instantaneous forw ard voltage at
x 3.0A(NOTE.1)
Maximum DC reverse current ^@TA=25
at rated DC blocking voltage @TA=100
V_RRM
V_RWS
V_DC
I_(AV)
I_FSM
V_F
I_R
Typical thermal resitance (NOTE. 2)
R_θJL
Operating junction temperature range
Storage temperature range
NOTE: 1.Pulse test:300 S pulse width,1%duty cy cle
2. Thermal resitance junction to lead.
T_J
T_STG
B360L
60
42
60
3.0
80
0.58
2.5
10
24
-55---+150
-55---+150
UNITS
V
V
V
A
A
V
mA
o_C/W
o_C
o_C
www.diode.kr