B320N Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Diode Semiconductor Korea
B320N-B360N
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS
REVERSE VOLTAGE: 20 --- 60 V
CURRENT: 3.0 A
FEATURES
Plastic package has Underwriters Laborator
111 Flammability Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief
Metal silicon junction, majority carrier conduction
High surge capability
High current capability,low forward voltage drop
Low power loss,high effciency
For use in low voltage high frequency inverters,free
111 wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250^oC/10 1
11 seconds at terminals
MECHANICAL DATA
Case:JEDEC NSMC,molded plastic over
1111passivated chip
Terminals:Solder Plated, solderable per MIL-STD-750,
1111Method 2026
Polarity: Color band denotes cathode end
NSMC
7.0 0.3
8.1 0.3
1.5 0.3
0.25 0.06
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified
B320N
Dev ice marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ord rectified current at
c T_L(SEE FIG.1) (NOTE 2)
Peak forw ard surge current 8.3ms single half-
c sine-w ave superimposed on rated load(JEDEC
c Method)
Maximum instantaneous forw ard voltage at
v 3.0A(NOTE.1)
V_RRM
V_RWS
V_DC
I_(AV)
I_FSM
V_F
B2N
20
14
20
Maximum DC reverse current @T_A=25^oC
I_R
at rated DC blockjing voltage(NOTE1) @T_A=100^oC
Typical thermal resitance (NOTE2)
R _JA
R _JL
Operating junction and storage temperature range T_STG
Storage temperature range
T_J
NOTE: 1.Pulse test:300 S pulse width,1%duty cy cle
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm²)copper pad areas
B330N
B3N
30
21
30
0.50
B340N
B4N
40
28
40
3.0
B350N
B5N
50
35
50
B360N
B6N
60
42
60
UNITS
V
V
V
A
100.0
A
0.5
20
50.0
10.0
-55--- +150
-55--- +125
0.70
V
mA
o_C/W
o_C
o_C
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