B120J Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – SCHOTTKY BARRIER RECTIFIER

Diode Semiconductor Korea
B120 J- - - B160J
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Plastic package has Underwriters Laboratory
111 Flam mability Clas sification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief
Metal s ilicon junction, majority carrier conduction
High surge capability
Low power loss,high effciency
For use in low voltage high frequency inverters ,free
111 wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250^oC/10
111 seconds at terminals
MECHANICAL DATA
Case:JEDEC SMAJ,molded plastic over
1111passivated chip
Terminals:Solder plated, solderable per MIL-STD-750,
1111Method 2026
Polarity: Color band denotes cathode end
REVERSE VOLTAGE: 20 --- 60 V
CURRENT: 1.0 A
SMAJ
4.3± 0.1
5.6± 0.2
1.3± 0.2
0.2± 0.05
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified
Dev ice marking code
Maximum recurrent peak reverse voltage
V_RRM
Maximum RMS voltage
V_RWS
Maximum DC blocking voltage
V_DC
Maximum average forw ord rectified current at
x T_L(SEE FIG.1)
I_(AV)
Peak forw ard surge current 8.3ms single half-
x sine-w ave superimposed on rated load(JEDEC I _FSM
x Method)
Maximum instantaneous forw ard voltage at
x 1.0A(NOTE.1)
V_F
Maximum DC reverse current (NOTE.1)
x @T_A=25^oC
I_R
at rated DC blockjing voltage
@T_A=100^oC
Typical thermal resitance (NOTE. 2)
R _JA
R _JL
Storage temperature range Operating junction
x and storage temperature range
T_j
B120J
B130J
B140J
B150J
B120 OOHB130 O O IB140 O OOIB150
20
30
40
50
14
21
28
35
20
30
40
50
1.0
B160J
B160
60
42
60
30.0
0.5
0.7
0.5
10.0
88.0
20.0
- 55 --- +125
UNITS
V
V
V
A
A
V
mA
o_C/W
o_C
Storage temperature range
T_STG
NOTE: 1.Pulse test:300 S pulse width,1%duty cy cle
2. P.C.B.mounted with 0.2"X0.2"(5.0X5.0mm²)copper pad areas
- 55 --- +150
o_C
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