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B120B Datasheet, PDF (1/2 Pages) Diodes Incorporated – 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Diode Semiconductor Korea
B120 B- - - B160B
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE: 20 --- 60 V
CURRENT: 1.0 A
FEATURES
Plastic package has Underwriters Laboratory
111 Flam mability Clas sification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief
Metal s ilicon junction, majority carrier conduction
High surge capability
Low power loss,high effciency
For use in low voltage high frequency inverters ,free
111 wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250oC/10
111 seconds at terminals
MECHANICAL DATA
Case:JEDEC SMB,molded plastic over
1111passivated chip
Terminals:Solder plated, solderable per MIL-STD-750,
1111Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
SMB
4 . 5± 0.1 5
5 . 3± 0.2
1.25± 0.2
0.2± 0.05
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
Dev ice marking code
Maximum recurrent peak reverse voltage
VRRM
Maximum RMS voltage
VRWS
Maximum DC blocking voltage
VDC
Maximum average forw ord rectified current at
x TL(SEE FIG.1)
I(AV)
Peak forw ard surge current 8.3ms single half-
x sine-w ave superimposed on rated load(JEDEC I FSM
x Method)
Maximum instantaneous forw ard voltage at
x 1.0A(NOTE.1)
VF
Maximum DC reverse current (NOTE.1)
x @TA=25oC
IR
at rated DC blockjing voltage
@TA=100oC
Typical thermal resitance (NOTE. 2)
R JA
R JL
Storage temperature range Operating junction
x and storage temperature range
Tj
B120B
B130B B140B
B150B
B120B OOHB130BO O IB140BOOOIB150B
20
30
40
50
14
21
28
35
20
30
40
50
1.0
B160B
B160B
60
42
60
30.0
0.5
0.7
0.5
10.0
88.0
20.0
- 55 --- +125
UNITS
V
V
V
A
A
V
mA
oC/W
oC
Storage temperature range
TSTG
NOTE: 1.Pulse test:300 S pulse width,1%duty cy cle
2. P.C.B.mounted with 0.2"X0.2"(5.0X5.0mm2)copper pad areas
- 55 --- +150
oC
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