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B120 Datasheet, PDF (1/2 Pages) Fuji Electric – 1 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Diode Semiconductor Korea
B120 - - - B160
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE: 20 --- 60 V
CURRENT: 1.0 A
FEATURES
Plastic package has Underwriters Laboratory
111 Flam mability Clas sification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief
Metal s ilicon junction, majority carrier conduction
High surge capability
Low power loss,high effciency
For use in low voltage high frequency inverters ,free
111 wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250oC/10
111 seconds at terminals
MECHANICAL DATA
Case:JEDEC DO-214AC,molded plastic over
1111passivated chip
Terminals:Solder plated, solderable per MIL-STD-750,
1111Method 2026
Polarity: Color band denotes cathode end
Weight: 0.002 ounces, 0.064 gram
DO - 214AC(SMA)
4.5± 0.1
5.1± 0.2
1.3± 0.2
0.2± 0.05
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
Dev ice marking code
Maximum recurrent peak reverse voltage
VRRM
Maximum RMS voltage
VRWS
Maximum DC blocking voltage
VDC
Maximum average forw ord rectified current at
x TL(SEE FIG.1)
I(AV)
Peak forw ard surge current 8.3ms single half-
x sine-w ave superimposed on rated load(JEDEC I FSM
x Method)
Maximum instantaneous forw ard voltage at
x 1.0A(NOTE.1)
VF
Maximum DC reverse current (NOTE.1)
x @TA=25oC
IR
at rated DC blockjing voltage
@TA=100oC
Typical thermal resitance (NOTE. 2)
R JA
R JL
Storage temperature range Operating junction
x and storage temperature range
Tj
B120
B130
B140
B150
B120OOOHB130OOOOIB140OOOOIB150
20
30
40
50
14
21
28
35
20
30
40
50
1.0
B160
OOOOUNITS
B160
60
V
42
V
60
V
A
30.0
A
0.5
0.7
0.5
10.0
88.0
20.0
- 55 --- +125
V
mA
oC/W
oC
Storage temperature range
TSTG
NOTE: 1.Pulse test:300 S pulse width,1%duty cy cle
2. P.C.B.mounted with 0.2"X0.2"(5.0X5.0mm2)copper pad areas
- 55 --- +150
oC
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