6A05S Datasheet, PDF (1/2 Pages) MIC GROUP RECTIFIERS – AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER

Diode Semiconductor Korea
6A05S---6A10S
PLASTIC SILICON RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned witn Freon,Alcohol,ls opropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:0.041 ounces,1.15 grams
Mounting position: Any
DO-27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
6A05S 6A1S 6A2S 6A4S 6A6S 6A8S 6A10S UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
V_RRM 50
100
200
400
600
800 1000
V
V_RMS
35
70
140
280
420
560
700
V
V_DC
50
100
200
400
600
800 1000
V
I_F(AV)
6.0
A
I_FSM
400.0
A
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 6.0 A
V_F
1.0
V
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note1)
C_J
Typical thermal resistance (Note2)
Operating junction temperature range
R_θJA
T_J
Storage temperature range
T_STG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
10.0
100.0
120
10
- 55 ---- + 150
- 55 ---- + 150
A
pF
/W
www.diode.kr