5A1 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

Diode Semiconductor Korea
5A1 - - - 5A10
PLASTIC SILICON RECTIFIERS
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 5.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Is opropanol
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
5A1
Maximum recurrent peak reverse voltage
V_RRM
100
Maximum RMS voltage
V_RMS
70
Maximum DC blocking voltage
V_DC
100
Maximum average forward rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
Peak forward surge current
10ms single half-sine-wave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forward voltage
@5.0A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Typical junction capacitance (Note1)
C_J
Typical thermal resistance
(Note2)
R _JA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
5A2
200
140
200
5A4 5A6
400 600
280 420
400 600
5.0
5A8
800
560
800
5A10
1000
700
1000
UNITS
V
V
V
A
300
A
1.2
10.0
100.0
80
15
- 55 ---- +150
- 55 ---- +150
V
A
pF
/W
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