4A1 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

Diode Semiconductor Korea
4A1 - - - 4A10
PLASTIC SILICON RECTIFIERS
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 4.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Isopropanol
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
DO - 27
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,50 Hz,res istive or inductive load. For capacitive load,derate by 20%.
4A1 4A2 4A4 4A6 4A8 4A10 UNITS
Maximum recurrent peak reverse voltage
V_RRM
100
Maximum RMS voltage
V_RMS
70
Maximum DC blocking voltage
V_DC
100
Maximum average forward rectified current
9.5mm lead length, @T_A=75
I_F(AV)
Peak forward surge current
10ms single half-sine-wave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forward voltage
@ 4.0A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Typical junction capacitance (Note1)
C_J
Typical thermal resistance
(Note2)
R _JA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient.
200
400 600
800 1000
V
140
280 420
560
700
V
200
400 600
800 1000
V
4.0
A
250.0
A
0.95
10.0
100.0
50
20
- 55 ---- +150
- 55 ---- +150
V
A
pF
/W
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