3R12 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH VOLTAGE RECTIFIERS

Diode Semiconductor Korea
3R12 --- 3R20
HIGH VOLTAGE RECTIFIERS
VOLTAGE RANGE: 1200 --- 1600 V
CURRENT: 3.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol and
similar solvents
MECHANICAL DATA
Case: JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces, 1.15 grams
Mounting position: Any
z
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximumaverage forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load T_J=125
Maximuminstantaneous forw ard voltage
@ 3.0A
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Operating junction temperature range
Storage temperature range
3R12
V_RRM
V_RMS
V_DC
1200
840
1200
I_F(AV)
3R14 3R16
1400
980
1400
1600
1120
1600
3.0
3R18 3R20
1800
1260
1800
2000
1400
2000
UNITS
V
V
V
A
I_FSM
150.0
A
V_F
1.8
V
10.0
I_R
100.0
A
T_J
T_STG
-55 ---- + 150
-55 ---- + 150
www.diode.kr