31DF1 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SUPER FAST RECTIFIERS

Diode Semiconductor Korea _{31DF1(Z) --- 31DF2(Z)}
SUPER FAST RECTIFIERS
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol and
similar solvents
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL-STD202,method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces,1.15 grams
Mounting position: Any
VOLTAGE RANGE: 100 --- 200 V
CURRENT: 1.6 A
DO - 27
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
V_RMS
V_DC
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
I_F(AV)
10ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ I_F=1.6A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance
(Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
31DF1
100
70
100
1.6
31DF2
200
140
200
UNITS
V
V
V
A
125.0
0.98
5.0
50.0
30
90
34
- 55 ----- + 150
- 55 ----- + 150
A
V
A
ns
pF
/W
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