1SS401 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATIONS)

Diode Semiconductor Korea
Schottky Barrier Diode
1SS401
FEATURES
z Small total capacitance.
z Low reverse current.
z Low forward voltage:V_F=0.38V(typ).
Pb
Lead-free
APPLICATIONS
z For general purpose applications.
ORDERING INFORMATION
Type No.
Marking
1SS401
D9
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
V_RM
25
V
Diode reverse voltage
V_R
20
V
Forward continuous Current
I_F
700
mA
Average rectified output current
I_O
300
mA
Power Dissipation
P_d
100
mW
Junction temperature
T_j
125
℃
Storage temperature range
T_stg
-55-+125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse current
Symbol
V_(BR)R
I_R
Forward voltage
V_F
Diode capacitance
C_D
Test conditions
I_R=100μA
V_R=20V
I_F=1mA
I_F=10mA
I_F=300mA
V_R=0V, f=1MHz
MIN Typ.
20
0.16
0.22
0.38
46
MAX
50
UNIT
V
μA
V
0.45
pF
www.diode.kr