1SS389 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (HIGH SEPPD SWITCHING APPLICATION)

Diode Semiconductor Korea
Schottky Barrier Diode
1SS389
FEATURES
z Low forward voltage.
z Small package.
Pb
Lead-free
APPLICATIONS
z Schottky diode in surface mounted circuits.
ORDERING INFORMATION
Type No.
Marking
1SS389
S4
SOD-523
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak reverse voltage
DC Reverse voltage
V_RM
15
V
V_R
10
V
Continuous forward current
Surge current
I_F
100
mA
I_FSM
1
A
Total power dissipation
P_tot
150
mW
Junction temperature
Storage temperature
T_j
125
℃
T_stg
-55-125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Symbol Min.
V_(BR)R
10
Forward voltage
V_F
Reverse current
I_R
Diode capacitance
C_d
Typ. Max. Unit
V
0.18
V
0.23 0.30 V
0.35 0.50 V
20 μA
20 40 pF
Conditions
I_R=100μA
I_F=1mA
I_F=5mA
I_F=100mA
V_R=10V
V_R=0,f=1MHz
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