1SS370 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)

Diode Semiconductor Korea
Surface Mount Switching Diode
1SS370
FEATURES
z Small surface mounting type.
z High speed.
Pb
Lead-free
z High reliability with high surge current
handing capability.
APPLICATIONS
z For general purpose switching applications.
ORDERING INFORMATION
Type No.
Marking
1SS370
F5
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
V_RM
Diode reverse voltage
V_R
Forward peak Current(max.)
I_FM
Average forward output Current
I_O
Forward Surge Current (10ms)
I_FSM
Power Dissipation
P_d
Junction temperature
T_j
Storage temperature range
T_stg
250
V
200
V
300
mA
100
mA
2
A
100
mW
125
℃
-55-+125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
I_R
V_F
C_D
t_rr
Test conditions MIN
V_R=50V
V_R=200V
I_F=10mA
I_F=100mA
V_R=0V f=1MHz
I_F=I_R=10mA
V_R=6V I_rr=I_R*0.1
MAX
0.1
1
1
1.2
3.0
UNIT
μA
V
pF
60
nS
www.diode.kr