1SS344 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

Diode Semiconductor Korea
Surface mount schottky planar diode
1SS344
FEATURES
z Fast reverse recovery time:t_rr=20ns(typ).
z Low forward voltage:V_F=0.50V (typ).
Pb
Lead-free
z High average forward current:I_O=0.5A(max.)
APPLICATIONS
z Ultra high speed switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
1SS344
H9
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Limits
Unit
Non-Repetitive Peak Reverse Voltage
DC Reverse Voltage
Forward Current(max)
Average forward Output current
Peak forward surge current
@=1.0ms
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
V_RM
V_R
I_FM
I_o
I_FSM
P_d
T_j
T_STG
25
V
20
V
1500
mA
500
mA
5
A
200
mW
125
℃
-55 to +125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic
Forward Voltage
Reverse Leakage Current
Diode Capacitance
Reverse Recovery Time
Symbol
V_F
I_R
C_D
t_rr
Min.
Typ.
0.30
0.38
0.50
120
20
MAX.
0.55
20
100
UNIT
V
μA
pF
ns
Test Condition
I_F=10mA
I_F=100mA
I_F=500mA
V_R=10V
V_R=20V
V_R=0V,f=1MHz
I_F=I_R=10mAI_rr=0.1*I_R
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