1SS226 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

Diode Semiconductor Korea
Surface mount switching diode
1SS226
FEATURES
Pb
z Fast switching.
Lead-free
z Power dissipation. P_D:150mW(Tamb=25℃)
z Fast reverse recovery time:t_rr=1.6ns(typ.)
APPLICATIONS
z High speed switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
1SS226
C3
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Limits
Unit
Non-Repetitive Peak Reverse Voltage
V_RM
85
V
DC Reverse Voltage
V_R
80
V
Forward Current(max)
I_FM
300
mA
Forward Output current
I_o
100
mA
Peak forward surge current @t=10ms
I_FSM
2
A
Power Dissipation
P_d
150
mW
Operating Junction Temperature Range
T_j
125
℃
Storage Temperature Range
T_STG
-55 to +125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Diode Capacitance
Reverse Recovery Time
Symbol Min TYP MAX UNIT Test Condition
V_(BR)R
80
0.60
V
I_R= 100μA
V_F
0.72
V
I_F=100mA
0.90 1.2
I_R
0.1
μA
V_R=30V
0.5
V_R=80V
C_D
0.9 3.0 pF V_R=0V,f=1MHz
t_rr
1.6 4.0 ns
I_F=I_R=10mAI_rr=0.1*I_R
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