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| 1SS187 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | |||
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Diode Semiconductor Korea
Surface mount switching diode
1SS187
FEATURES
z Low forward voltage
Pb
VF(3)=0.92V(typ).
z Fast switching.
Lead-free
z Fast reverse recovery time:trr=1.6ns(typ)
APPLICATIONS
z High speed switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
1SS187
D3
Package Code
SOT-23
MAXIMUM RATING @ Ta=25â unless otherwise specified
Characteristic
Symbol
Limits
Unit
Non-Repetitive Peak Reverse Voltage
DC Reverse Voltage
Forward Continuous Current(max)
Forward Output current
Surge current (10ms)
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
VRM
VR
IFM
Io
IFSM
Pd
Tj
TSTG
85
V
80
V
300
mA
100
mA
2
A
150
mW
125
â
-55 to +125
â
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Total Capacitance
Reverse Recovery Time
Symbol Min Typ MAX
V(BR)R
80 -
-
0.61
VF
-
0.74
0.92 1.2
0.1
IR
-
0.5
CT
-
2.2 4.0
trr
-
1.6 4.0
UNIT Test Condition
V
IR= 100μA
IF=1mA
V
IF=10mA
IF=100mA
μA
VR=30V
VR=80V
pF VR=0V,f=1.0MHz
ns
IF=IR=10mAIrr=0.1*IR
www.diode.kr
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