1SS184 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APLICATION)

Diode Semiconductor Korea
Surface mount switching diode
1SS184
FEATURES
z Low forward voltage
Pb
V_F(3)=0.9V(typ).
z Fast switching.
Lead-free
z Fast reverse recovery time:t_rr=1.6ns(typ)
APPLICATIONS
z High speed switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
1SS184
B3
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Limits
Unit
Non-Repetitive Peak Reverse Voltage
DC Reverse Voltage
Forward Current(peak)
Forward Current
Surge Current (10ms)
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
V_RM
V_R
I_FM
I_o
I_FSM
P_D
T_j
T_STG
85
V
80
V
300
mA
100
mA
2
A
150
mW
125
℃
-55 to +125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Total Capacitance
Reverse Recovery Time
Symbol Min
V_(BR)R
80
V_F
-
I_R
-
C_T
-
t_rr
-
Typ MAX
-
-
0.60
0.72
0.90 1.2
0.1
0.5
0.9 3.0
1.6 4.0
UNIT
V
V
μA
pF
ns
Test Condition
I_R= 100μA
I_F=1mA
I_F=10mA
I_F=100mA
V_R=30V
V_R=80V
V_R=0V,f=1.0MHz
I_F=I_R=10mAI_rr=0.1*I_R
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