1S1941 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

Diode Semiconductor Korea
1S1941(Z) - - -1S1944(Z)
PLASTIC SILICON RECTIFIER
VOLTAGE RANGE: 100 --- 600 V
CURRENT: 0.5 A
FEATURES
Low cost
Diffused juncton
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014ounces,0.39 grams
Mounting position: Any
DO - 15
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
1S
1941
Maximum recurrent peak reverse voltage
V_RRM
100
Maximum RMS voltage
Maximum DC blocking voltage
V_RMS
70
V_DC
100
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 0.5 A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note1)
C_J
Typical thermal resistance
(Note2)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
1S
1942
200
140
200
1S
1943
400
280
400
0.5
35.0
1.2
5.0
50.0
20
40
- 55---- + 150
- 55 ---- + 150
1S
1944
600
420
600
UNITS
V
V
V
A
A
V
A
pF
/W
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