1N5059 Datasheet, PDF (1/2 Pages) Powerex Power Semiconductors – Passivated Rectifier

Diode Semiconductor Korea
1N5059---1N5062
PLASTIC SILICON RECTIFIERS
VOLTAGE RANGE: 200---800 V
CURRENT: 2.0 A
FEATURES
Low cost
Diffus ed junction
Glass passivated chips
Low forward voltage drop
High crrent capability
Eas ily cleaned with Freon,Alcohol, ls opropand
and s im ilar s olvents
MECHANICAL DATA
Cas e: JEDEC DO-15, m olded plas tic
Term inals : Axial leads ,s olderable per MIL-STD
-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces , 0.39gram s
Mounting: Any
DO - 15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
1N5059
Maximum recurrent peak reverse voltage
V_{R R M}
200
Maximum RMS voltage
V _{R MS}
140
Maximum DC blocking voltage
V_DC
200
Maximum average forw ard rectif ied current
9.5mm lead length, @T_A=50
I_{F (AV)}
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@T_J =125
Maximum instantaneous
@1.0A
forw ard voltage
@ 2.5A
I_{F SM}
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=150
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
C_J
R_θJA
T_J
Storage temperature range
T_STG
N OTE: 1.Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 0V DC.
3. Thermal resistance from junction to ambient.
1N5060
400
280
400
1N5061
600
420
600
2.0
50.0
1.2
1.15
5.0
100
4.0
40
45
- 55 ----- + 175
- 55 ----- + 175
1N5062
800
560
800
UNITS
V
V
V
A
A
V
A
µs
pF
K/W
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