1N4448 Datasheet, PDF (1/3 Pages) Rectron Semiconductor – SIGNAL DIODE

Diode Semiconductor Korea
1N4448
SMALL SIGNAL SWITCHING DIODE
REVERSE VOLTAGE : 75 V
CURRENT: 0.15 A
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
DO - 35(GLASS)
MECHANICAL DATA
Case: DO-35, glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
V_R
V_RM
Half w ave rectification w ith resist.load
I_AV
T_A=
and f 50Hz
Forw ard surge current @ t<1s and T_J=
I_FSM
Pow er dissipation
@ T_A=
P_tot
Junction temperature
T_J
Storage temperature range
T_STG
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
MIN
Forw ard voltage
Leakage current
@ I_F=5mA
@ I_F=10mA
V_F
0.62
-
@ V_R=20V
@ V_R=75V
@ V_R=20V T_J=
Capacitance @ V_F=V_R=0_V
Reverse breakdow n voltage
tested w ith 100μA pulses
I_R
C_J
V_(BR)R
-
-
-
-
100.0
Reverse recovery time
f rom I_F=10mA to I_R=1mA, V_R=6V. R_L=100Ω.
Thermal resistance junction to ambient
Rectification efficiency @ f=100MHz,V_RF=2V
t_rr
R_θJA
η
-
0.45
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
1N4448
75.0
100.0
150¹⁾
500.0
500¹⁾
175
-55 --- +175
TYP
-
-
-
-
-
-
-
-
-
UNITS
V
V
mA
mA
mW
MAX
0.72
1.0
UNITS
V
V
25
nA
5
μA
50
μA
4
pF
-
V
4
ns
350¹⁾
-
K/W
-
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