1N4151 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diodes

Diode Semiconductor Korea
1N4151
SMALL SIGNAL SWITCHING DIODE
REVERSE VOLTAGE : 50 V
CURRENT: 0.15 A
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
DO-35(GLASS)
MECHANICAL DATA
Case: DO-35,glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
V_R
V_RM
half w ave rectification w ith resistive load
I_AV
@ T_A=
and f 50Hz
Forw ard surge current @ t<1s and T_J=
I_FSM
Pow er dissipation
@ T_A=
P_tot
Junction temperature
T_J
Storage temperature range
T_STG
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
MIN
Forw ard voltage @ I_F=10mA
Leakage current
V_F
-
@ V_R=50V
@ V_R=20V T_J=150
Capacitance @ V_F=V_R=0V
Reverse breakdow n voltage
tested w ith 5μA pulses
I_R
I_R
C_J
V_(BR)R
-
-
-
75.0
Reverse recovery time
from I_F=10mA to I_R=10mA to I_R=1mA
from I_F=10mA to I_R=1mA, V_R=6V. R_L=100Ω.
Thermal resistance junction to ambient
Rectification efficiency @ 100MHz,V_RF=2V
t_rr
R_θJA
ηv
-
0.45
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
1N4151
50.0
75.0
150¹⁾
500.0
500¹⁾
175
-55 --- +175
TYP
-
-
-
-
-
-
-
UNITS
V
V
mA
mA
mW
MAX
1.0
50.0
50.0
2
-
UNITS
V
nA
μA
pF
V
4
ns
2
ns
350¹⁾
K/W
-
-
www.diode.kr