1N4148 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diodes

Diode Semiconductor Korea
1N4148
SMALL SIGNAL SWITCHING DIODE
REVERSE VOLTAGE : 75 V
CURRENT: 0.15 A
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 m W power dissipation
These diodes are also available in glass case
DO-34. Mini-MELF
MECHANICAL DATA
Case: DO-35, glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
DO-35(GLASS)
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at ₂₅ am bient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
V_R
V_RM
half w ave rectification w ith resist.load
I_AV
@^T_A⁼25 ^{and f 50Hz}
Forw ard surge current @ t<1s and T_J=₂₅
I_FSM
Pow er dissipation
@ T_A=₂₅
P_tot
Junction temperature
T_J
Storage temperature range
T_STG
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
MIN
Forw ard voltage at I_F=10mA
Leakage current
V_F
-
@ V_R=20V
@ V_R=75V
@ V_R=20V T_J=150
Capacitance @ V_F=V_R=0V
Voltage rise w hen sw itching on
I_R
-
I_R
-
I_R
-
C_J
-
tested w ith 50mA pulses
V_{f r}
-
tp=0.1μs. Rise time<30ns. fp=5 to 100KHz
Reverse recovery time
f rom I_F=10mA to I_R=1mA
V_R=6V. R_L=100Ω.
Thermal resistance junction to ambient
Rectification efficiency at 100MHz,V_RF=2V
t_rr
R_θJA
ηv
-
0.45
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
1N4148
75.0
100.0
150.0
500.0
500¹⁾
175
-55 --- +175
TYP
-
-
-
-
-
-
-
-
UNITS
V
V
mA
mA
mW
MAX
1.0
25.0
5.0
50.0
4
2.5
U N ITS
V
nA
μA
μA
pF
V
4
ns
350¹⁾
-
K/W
-
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