1N4139 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

Diode Semiconductor Korea
1N4139 - - -1N4146
PLASTIC SILICON RECTIFIERS
VOLTAGE RANGE: 50 --- 1200 V
CURRENT: 3.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Free, Alcohol, Isopropanol
and sim ilar solvents
MECHANICAL DATA
Case: JEDEC DO-27,m olded plastic
Term inals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 gram s
Mounting position: Any
DO - 27
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unless otherwise specified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
1N
4139
Maxim um recurrent peak reverse voltage
Maxim um RMS voltage
Maxim um DC blocking voltage
Maxim um average forward rectified current
9.5m m lead length,
@T_A=75
Peak forward surge current
V_RRM 50
V_RMS 35
V_DC
50
I_F(AV)
10m s single half-sine-wave
I_FSM
superim posed on rated load @T_J=125
Maxim um instantaneous forward voltage
@ 3.0 A
V_F
Maxim um reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Typical junction capacitance (Note1)
C_J
Typical therm al resistance
(Note2)
R _JA
Operating junction tem perature range
T_J
Storage tem perature range
T_STG
Note: 1.Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2.Thermal resistance f rom junction to ambient.
1N
4140
100
70
100
1N 1N 1N
4141 4142 4143
200 400 600
140 280 420
200 400 600
3.0
300.0
1.0
10.0
100.0
35
20
- 55 ---- + 150
- 55 ---- + 150
1N
4144
800
560
800
1N 1N _UNITS
4145 4146
1000 1200 V
700 840
V
1000 1200 V
A
A
V
A
pF
/W
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