1N4001G Datasheet, PDF (1/2 Pages) NXP Semiconductors – Rectifiers(Rugged glass package, using a high temperature alloyed construction)

Diode Semiconductor Korea _{1N4001G --- 1N4007G}
GLASS PASSIVATED RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FEATURES
The plastic package carries underwrites laboratory
flammability classification 94V-O
Low reverse leakage
High current capability
Glass passivated junction
Low forward voltage drop
High temperature soldering guaranteed:
vvvvv350 /10 seconds, 0.375"(9.5mm) lead length,
wwc5lbs, (2.3kg) tension
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
DO - 41
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
1N
4001G
1N
4002G
1N 1N 1N
4003G 4004G 4005G
1N
4006G
1N
4007G
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximumaverage forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
V_RRM
50
V_RMS
35
V_DC
50
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximuminstantaneous forw ard voltage
at 1.0 A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Typical junction capacitance (Note)
C_J
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.
100 200 400 600 800 1000 V
70 140 280 420 560 700
V
100 200 400 600 800 1000 V
1.0
A
30
1.1
5.0
50.0
15
- 55 ---- + 175
- 55 ---- + 175
A
V
A
pF
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