1N17 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SCHOTTKY BARRIER RECTIFIER

Diode Semiconductor Korea
1N17- - - 1N19
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 20 --- 40 V
CURRENT: 1.0 A
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC R--1,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.20 grams
Mounting position: Any
R-1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
IN17
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
V_RMS
V_DC
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=70
Maximum instantaneous forw ard voltage @ 1.0A
z (Note 1)
@ 3.0A ^VF
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note2)
C_J
Typical thermal resistance (Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
20
14
20
0.45
0.75
IN18
30
21
30
1.0
25.0
0.55
0.875
1.0
10.0
110
50
- 55 ---- + 125
- 55 ---- + 150
IN19
40
28
40
0.60
0.90
UNITS
V
V
V
A
A
V
mA
pF
/W
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