1H1 Datasheet, PDF (1/2 Pages) Won-Top Electronics – 1.0A MINIATURE HIGH EFFICIENCY RECTIFIER

Diode Semiconductor Korea
1H1--- 1H8
HIGH EFFICIENCY RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FEATURES
Diffused junction
Low forward voltage drop
High current capability
High reliability
High surge current capability
R-1
MECHANICAL DATA
Case:JEDEC R-1,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.20 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
1H1 1H2 1H3 1H4 1H5 1H6 1H7 1H8 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T_A=75
Peak f orw ard surge current
V_RRM 50
V_RMS 35
V_DC 50
I_F(AV)
8.3ms single half -sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous f orw ard voltage
@ 1.0 A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t _rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
100 200 300 400 600 800 1000 V
70 140 210 280 420 560 700 V
100 200 300 400 600 800 1000 V
1.0
A
30.0
1.0
1.3
5.0
100.0
50
20
60
- 55 ---- + 150
- 55 ---- + 150
A
1.7
V
A
75
ns
15
pF
/W
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