1F10 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – FAST RECOVERY RECTIFIER

Diode Semiconductor Korea
1F10 --- 1F20
PHOTO FLASH RECTIFIERS
VOLTAGE RANGE: 1000 --- 2000 V
CURRENT: 0.5 A
FEATURES
Fast switching
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol and
similar solvents
MECHANICAL DATA
Case: JEDEC R--1,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007ounces, 0.20 grams
Mounting position: Any
R-1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate by 20%.
1F10 1F12 1F14 1F15 1F16 1F18 1F20 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
V_RMS
V_DC
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load T_J=125
Maximum instantaneous forw ard voltage
@ 0.5 A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Maximum reverse recovery time (NOTE1)
t_rr
Typical junction capacitance
(NOTE2)
C_J
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Rev erse recov ery test conditions:I_F=0.5A,I_R=-1.0A,I_RR=-0.25A.
2. Mersured at 1MH_Z and applied rev erse v oltage of 4.0V.
1000
700
1000
1200
840
1200
1400 1500 1600
980 1050 1120
1400 1500 1600
0.5
25.0
1.8
5.0
100.0
300
15
-55 ---- + 150
-55 ---- + 150
1800 2000
V
1260 1400
V
1800 2000
V
A
A
V
μA
ns
pF
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