1E1G Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – ULTRA FAST RECTIFIERS

Diode Semiconductor Korea
1E1G--- 1E6G
ULTRA FAST RECTIFIERS
FEATURES
Low cost
Glass passivated junction
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries U/L recognition 94V-0
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 1.0 A
R-1
MECHANICAL DATA
Case:JEDEC R--1,molded plastic
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.20 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1E1G 1E2G 1E3G 1E4G 1E5G 1E6G UNITS
Maximumrecurrent peak reverse voltage
Maximum RMS voltage
MaximumDCblocking voltage
V_RRM 50
V_RMS 35
V_DC 50
Maximumaverage forward rectified current
9.5mm lead length,
Peak forward surge current
@T_A=75
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximuminstantaneous forward voltage
@ 1.0A
V_F
Maximumreverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=150
Maximum reverse recovery time (Note1)
t _rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance (Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to ambient
100
200 400
600
800
V
70
140
280 420
560
V
100
200
400 600
800
V
1.0
A
30.0
0.95
1.25
5.0
150.0
35
17
50
- 55 ----- + 175
- 55 ----- + 175
A
1.7
V
A
ns
pF
̼ͤ
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