1E1 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere)

Diode Semiconductor Korea
1E1---1E9
SUPER FAST RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC R--1,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007ounces,0.20 grams
Mounting position: Any
R-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
1E1 1E2 1E3 1E4 1E5 1E6 1E7 1E8 1E9 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
V_RRM 50
V_RMS 35
V_DC 50
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@1.0 A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
100 150
70 105
100 150
0.95
200 300 400
140 210 280
200 300 400
1.0
30
1.25
5.0
150
35
12
55
- 55---- +150
- 55---- + 150
600 800 1000 V
420 560 700 V
600 800 1000 V
A
A
2.2
V
A
ns
pF
/W
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