NPW-TSD-ADE-1 Datasheet, PDF (5/14 Pages) DOMINANT Semiconductors – SPNovaLED InGaN White High Lumens : 350 mA

DOMINANT ^TM
Semiconductors
Innovating Illumination
Relative Intensity Vs Forward Current
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
200
400
600
Forward Current, mA
InGaN White High Lumens : 350 mA
Relative Flux Vs Forward Current
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
200
400
600
Forward Current, mA
Forward Current Vs Forward Voltage
600
500
400
300
200
100
0
2
2.5
3
3.5
4
4.5
Forward Voltage, V
Relative Spectral Emission
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
500
600
700
Wavelength, nm
Forward Current Vs Ambient Temperature (Rja=40K/W)
400
350
300
250
200
150
100
50
0
0 10 20 30 40 50 60 70 80 90 100
Ambient Temperature
5
MaximMuamximPeurmmiPsesribmleisPsuiblsleePCuulrsreenCtu, rTrae=n2t5 ˚C
1000
900
800
700
600
500
400
300
200
1
10
100
Duty (%); Tp<=0.01 sec
24/07/2007 V3.0